Doping Monolayer Graphene with Single Atom Substitutions-Reference-Cited by-同舟云学术

Doping Monolayer Graphene with Single Atom Substitutions

Published:2011-12-07 Issue:1 Volume:12 Page:141-144
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wang Hongtao¹²,Wang Qingxiao¹,Cheng Yingchun³,Li Kun¹,Yao Yingbang¹,Zhang Qiang¹,Dong Cezhou²,Wang Peng²,Schwingenschlögl Udo³,Yang Wei²,Zhang X. X.¹

Affiliation:

1. Advanced Nanofabrication, Imaging and Characterization Core Lab, King Abdullah University of Science and Technology (KAUST), Thuwal 239955, Kingdom of Saudi Arabia

2. Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027, China

3. Materials Science and Engineering, King Abdullah University of Science and Technology, Thuwal 239955, Kingdom of Saudi Arabia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl2031629

Reference41 articles.

1. Tunable Kondo effect in graphene with defects

2. Magnetism of substitutional Co impurities in graphene: Realization of singleπvacancies

3. Embedding Transition-Metal Atoms in Graphene: Structure, Bonding, and Magnetism

4. Edge-functionalized and substitutionally doped graphene nanoribbons: Electronic and spin properties

5. Defect-induced magnetism in graphene

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