Theoretical Study of the Electron Transport in Graphene with Vacancy and Residual Oxygen Defects after High-Temperature Reduction-Reference-Cited by-同舟云学术

Theoretical Study of the Electron Transport in Graphene with Vacancy and Residual Oxygen Defects after High-Temperature Reduction

Published:2011-04-27 Issue:19 Volume:115 Page:9719-9725
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Lee Geunsik¹²,Kim Kwang S.²,Cho Kyeongjae¹

Affiliation:

1. Department of Materials Science and Engineering and Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States

2. Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang 790-784, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp111841w

Reference46 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

3. Structural Coherency of Graphene on Ir(111)

4. Large-scale pattern growth of graphene films for stretchable transparent electrodes

5. Roll-to-roll production of 30-inch graphene films for transparent electrodes

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