“Double Exposure Method”: a Novel Photolithographic Process to Fabricate Flexible Organic Field-Effect Transistors and Circuits-Reference-Cited by-同舟云学术

“Double Exposure Method”: a Novel Photolithographic Process to Fabricate Flexible Organic Field-Effect Transistors and Circuits

Published:2013-01-15 Issue:7 Volume:5 Page:2316-2319
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ji Deyang¹,Jiang Lang¹,Dong Huanli¹,Meng Qing¹,Wang Zongrui¹,Zhang Hantang¹,Hu Wenping¹

Affiliation:

1. Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am302684k

Reference21 articles.

1. Low-Voltage Organic Field-Effect Transistors and Inverters Enabled by Ultrathin Cross-Linked Polymers as Gate Dielectrics

2. Crystalline Ultrasmooth Self-Assembled Monolayers of Alkylsilanes for Organic Field-Effect Transistors

3. Highly sensitive flexible pressure sensors with microstructured rubber dielectric layers

4. Air Stable Cross-Linked Cytop Ultrathin Gate Dielectric for High Yield Low-Voltage Top-Gate Organic Field-Effect Transistors

5. Experimental Techniques for the Fabrication and Characterization of Organic Thin Films for Field-Effect Transistors

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