Anisotropic and Passivation-Dependent Quantum Confinement Effects in Germanium Nanowires: A Comparison with Silicon Nanowires-Reference-Cited by-同舟云学术

Anisotropic and Passivation-Dependent Quantum Confinement Effects in Germanium Nanowires: A Comparison with Silicon Nanowires

Published:2006-08-29 Issue:37 Volume:110 Page:18332-18337
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Jing Mingwei¹,Ni Ming¹,Song Wei¹,Lu Jing¹,Gao Zhengxiang¹,Lai Lin¹,Mei Wai Ning¹,Yu Dapeng¹,Ye Hengqiang¹,Wang Lu¹

Affiliation:

1. Mesoscopic Physics Laboratory, Department of Physics, Peking University, Beijing 100871, PRC, and Department of Physics, University of Nebraska at Omaha, Omaha, Nebraska 68182-0266

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp063518j

Reference34 articles.

1. Semiconductor Clusters, Nanocrystals, and Quantum Dots

2. Noncrystalline Structures of Ultrathin Unsupported Nanowires

3. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

4. Control of Thickness and Orientation of Solution-Grown Silicon Nanowires

5. Small-Diameter Silicon Nanowire Surfaces

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