Effects of Strain and Electric Field on Molecular Doping in MoSSe
Author:
Affiliation:
1. College of Physics and Communication Electronics, Laboratory of Computational Material Physics, Jiangxi Normal University, Nanchang 330022, China
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c01747
Reference42 articles.
1. Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure
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4. Strain-engineered artificial atom as a broad-spectrum solar energy funnel
5. High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
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