Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission-Reference-Cited by-同舟云学术

Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission

Published:2019-06-24 Issue:6 Volume:4 Page:10985-10990
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Liao Xiaxia¹²^ORCID,Jeong Ah Reum¹,Wilks Regan G.¹,Wiesner Sven¹,Rusu Marin¹,Félix Roberto¹^ORCID,Xiao Ting¹,Hartmann Claudia¹^ORCID,Bär Marcus¹³^ORCID

Affiliation:

1. Department Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

2. School of Materials Science and Engineering, Nanchang University, Nanchang 330031, PR China

3. Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität ErlangenNürnberg, Egerlandstrasse 3, 91058 Erlangen, Germany

Funder

Helmholtz-Gemeinschaft

Robert Bosch Stiftung

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.9b01027

Reference31 articles.

1. Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications

2. Role of molybdenum oxide for organic electronics: Surface analytical studies

3. The effect of molybdenum oxide interlayer on organic photovoltaic cells

4. Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces

5. The interface state assisted charge transport at the MoO3/metal interface

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