Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor-Reference-Cited by-同舟云学术

Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor

Published:2023-08-29 Issue:36 Volume:8 Page:32998-33005
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Jarosz Dawid¹²^ORCID,Stachowicz Marcin³^ORCID,Krzeminski Piotr²,Ruszala Marta²,Jus Anna²,Sliz Pawel²,Ploch Dariusz²,Marchewka Michal²

Affiliation:

1. International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668 Warsaw, Poland

2. Center of Microelectronics and Nanotechnology, University of Rzeszow, Institute of Materials Science and Engineering, Al. Rejtana 16c, PL-35-959 Rzeszow, Poland

3. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02-668 Warsaw, Poland

Funder

Fundacja na rzecz Nauki Polskiej

Narodowe Centrum Badan i Rozwoju

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c04777

Reference12 articles.

1. Molecular beam epitaxy

2. How molecular beam epitaxy (MBE) began and its projection into the future

3. MBE growth of high-quality GaAs

4. Superior molecular beam epitaxy (MBE) growth on (N11)A GaAs

5. Surface-morphology evolution during unstable homoepitaxial growth of GaAs(110)

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