External Electric Field-Induced the Modulation of the Band Gap and Quantum Capacitance of F-Functionalized Two-Dimensional Sc2C
Author:
Affiliation:
1. Physical Teaching and Research of Fundamental Teaching Section, Henan Polytechnic Institute, Nanyang 473000, China
2. College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China
Funder
Science and Technology Department of Henan Province
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c03102
Reference49 articles.
1. Graphene: Status and Prospects
2. Graphene-analogous low-dimensional materials
3. Recent advances in free-standing two-dimensional crystals with atomic thickness: design, assembly and transfer strategies
4. Boron nitride substrates for high-quality graphene electronics
5. Buckled two-dimensional Xene sheets
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