Effects of Dielectric Material, HMDS Layer, and Channel Length on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors-Reference-Cited by-同舟云学术

Effects of Dielectric Material, HMDS Layer, and Channel Length on the Performance of the Perylenediimide-Based Organic Field-Effect Transistors

Published:2017-06-07 Issue:6 Volume:2 Page:2552-2560
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Vasimalla Suresh¹,Subbarao Nimmakayala V. V.¹,Gedda Murali¹^ORCID,Goswami Dipak K.¹,Iyer Parameswar Krishnan¹^ORCID

Affiliation:

1. Department of Chemistry, ‡Centre for Nanotechnology, and §Department of Physics, Indian Institute of Technology Guwahati, 781039 Guwahati, Assam, India

Funder

Science and Engineering Research Board

Department of Electronics and Information Technology, Ministry of Communications and Information Technology

Max-Planck-Gesellschaft

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.7b00374

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