All-Optical Reconfigurable Electronic Memory in a Graphene/SrTiO3 Heterostructure
Author:
Affiliation:
1. Department of Physics, Nanchang University, Nanchang 330031, China
2. Jiangxi Key Laboratory of Nanomaterials and Sensors, School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangxi Province
Jiangxi Provincial Innovation Talents of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c00938
Reference33 articles.
1. Large-scale integration of wavelength-addressable all-optical memories on a photonic crystal chip
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4. Tunnel field-effect transistors as energy-efficient electronic switches
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1. Influence of the Hubbard U Correction on the Electronic Properties and Chemical Bands of the Cubic (Pm3¯m) Phase of SrTiO3 Using GGA/PBE and LDA/CA-PZ Approximations;Molecules;2024-06-28
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