Highly Sensitive NO2 Detection by TVS-Grown Multilayer MoS2 Films
Author:
Affiliation:
1. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
2. Fujitsu Limited, 4-1-1 Kamiodanaka, Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan
Funder
Core Research for Evolutional Science and Technology
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c05113
Reference64 articles.
1. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
2. Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
3. MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
4. Chemical Vapor Sensing with Monolayer MoS2
5. Fabrication of Flexible MoS2Thin-Film Transistor Arrays for Practical Gas-Sensing Applications
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