Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers-Reference-Cited by-同舟云学术

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Published:2021-07-28 Issue:31 Volume:6 Page:20667-20675
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Pirnaci Massimo D.¹,Spitaleri Luca²³^ORCID,Tenaglia Dario¹,Perricelli Francesco²³,Fragalà Maria Elena²³^ORCID,Bongiorno Corrado⁴,Gulino Antonino²³^ORCID

Affiliation:

1. STMicroelectronics, Stradale Primosole, 50, 95121 Catania, Italy

2. Department of Chemical Sciences, University of Catania, Viale Andrea Doria 6, 95125 Catania, Italy

3. INSTM U.d.R. of Catania, Viale Andrea Doria 6, 95125 Catania, Italy

4. CNR-IMM, Zona industriale Strada VIII, 5, 95121 Catania, Italy

Funder

Universit?? di Catania

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c02905

Reference46 articles.

1. Silicon Carbide as a Platform for Power Electronics

2. High-temperature electronics - a role for wide bandgap semiconductors?

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4. Review of Silicon Carbide Power Devices and Their Applications

5. An On‐Chip SiC MEMS Device with Integrated Heating, Sensing, and Microfluidic Cooling Systems

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