Beta Irradiation Effects on Electrical Characteristics of Graphene-Doped PVA/n-type Si Nanostructures-Reference-Cited by-同舟云学术

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Beta Irradiation Effects on Electrical Characteristics of Graphene-Doped PVA/n-type Si Nanostructures

Published:2024-05-20 Issue:22 Volume:9 Page:23193-23201
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Abay Özlem¹²,Ulusoy Murat³^ORCID,Uyar Esra³,Gökmen Uğur⁴,Bilge Ocak Sema¹^ORCID

Affiliation:

1. Graduate School of Natural and Applied Sciences, Department of Advanced Technologies, Gazi University, 06500 Ankara, Turkey

2. Turkish Energy, Nuclear and Mineral Research Agency, 06980 Ankara, Turkey

3. Faculty of Science, Department of Physics, Gazi University, 06500 Ankara, Turkey

4. Faculty of Technology, Department of Metallurgical and Materials Engineering, Gazi University, 06500 Ankara, Turkey

Funder

Gazi ??niversitesi

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c08449

Reference47 articles.

1. Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors

2. Organic Semiconducting Oligomers for Use in Thin Film Transistors

3. X-ray stability and response of polymeric photodiodes for imaging applications

4. The effect of electron- phonon coupling in spin–orbit-coupled graphene

5. A polymer/fullerene based photodetector with extremely low dark current for x-ray medical imaging applications

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