Energy Scales of Compositional Disorder in Alloy Semiconductors
Author:
Affiliation:
1. Department für Chemie, Universität zu Köln, Greinstraße 4-6, 50939Köln, Germany
2. Faculty of Physics, Philipps-Universität Marburg, Marburg35032, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.2c05426
Reference30 articles.
1. Exciton line broadening by compositional disorder in alloy quantum wells
2. Disorder effects in nitride semiconductors: impact on fundamental and device properties
3. Interplay of Structural and Optoelectronic Properties in Formamidinium Mixed Tin-Lead Triiodide Perovskites
4. Energy Scaling of Compositional Disorder in Ternary Transition‐Metal Dichalcogenide Monolayers
5. Band gap engineering in blended organic semiconductor films based on dielectric interactions
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