Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors-Reference-Cited by-同舟云学术

Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors

Published:2021-12-09 Issue:50 Volume:6 Page:34429-34437
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Romanov Roman I.¹,Kozodaev Maxim G.¹,Chernikova Anna G.¹^ORCID,Zabrosaev Ivan V.¹,Chouprik Anastasia A.¹^ORCID,Zarubin Sergey S.¹,Novikov Sergey M.¹,Volkov Valentyn S.¹,Markeev Andrey M.¹^ORCID

Affiliation:

1. Moscow Institute of Physics and Technology (National Research University), Institutskii per. 9, 141701 Dolgoprudny, Moscow Region, Russia

Funder

Russian Science Foundation

Ministry of Science and Higher Education of the Russian Federation

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c04532

Reference44 articles.