Oxidation Resistance Improvement of Graphene-Oxide-Semiconductor Planar-Type Electron Sources Using h-BN as an Oxygen-Resistant, Electron-Transmissive Coating

Author:

Matsumoto Naoyuki12,Takao Yoshinori3,Nagao Masayoshi2,Murakami Katsuhisa2ORCID

Affiliation:

1. Department of Mechanical Engineering, Materials Science, and Ocean Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

2. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Ibaraki, Japan

3. Division of Systems Research, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Protective Layer Process of Graphene-Oxide-Semiconductor Electron Emission Devices for Low Earth Orbit Applications;2023 30th International Symposium on Discharges and Electrical Insulation in Vacuum (ISDEIV);2023-06-25

2. Development of planar type electron emission devices using a heterostructure of two-dimensional materials;2023 30th International Symposium on Discharges and Electrical Insulation in Vacuum (ISDEIV);2023-06-25

3. Low-Temperature Direct Synthesis of Multilayered h-BN without Catalysts by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition;ACS Omega;2023-01-31

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