Utilization of Nanoporous Nickel Oxide as the Hole Injection Layer for Quantum Dot Light-Emitting Diodes-Reference-Cited by-同舟云学术

Utilization of Nanoporous Nickel Oxide as the Hole Injection Layer for Quantum Dot Light-Emitting Diodes

Published:2021-05-12 Issue:20 Volume:6 Page:13447-13455
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Chen Wei-Sheng¹,Yang Sheng-Hsiung¹^ORCID,Tseng Wei-Cheng²,Chen Wilson Wei-Sheng²,Lu Yuan-Chang²

Affiliation:

1. Institute of Lighting and Energy Photonics, College of Photonics, National Chiao Tung University, No. 301, Gaofa 3rd Road, Guiren District, Tainan 71150, Taiwan, ROC

2. Opulence Optronics Co., Ltd., 3F, No. 1, Zhanye 1st Road, East District, Hsinchu 30091, Taiwan, ROC

Funder

Ministry of Education

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.1c01618

Reference43 articles.

1. Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer

2. Ultrastable Quantum-Dot Light-Emitting Diodes by Suppression of Leakage Current and Exciton Quenching Processes

3. Li and Mg Co-Doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting Diodes

4. A low-temperature-annealed and UV-ozone-enhanced combustion derived nickel oxide hole injection layer for flexible quantum dot light-emitting diodes

5. High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer

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