Complementary Charge Trapping and Ionic Migration in Resistive Switching of Rare-Earth Manganite TbMnO3-Reference-Cited by-同舟云学术

Complementary Charge Trapping and Ionic Migration in Resistive Switching of Rare-Earth Manganite TbMnO3

Published:2013-02-07 Issue:4 Volume:5 Page:1213-1217
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cui Yimin¹,Peng Haiyang²,Wu Shuxiang²,Wang Rongming¹,Wu Tom²

Affiliation:

1. Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Department of Physics, Beihang University, Beijing 100191, China

2. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am301769f

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5. Who Wins the Nonvolatile Memory Race?

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