The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga2O3/Gallium–Indium Eutectic Junctions-Reference-Cited by-同舟云学术

The SAM, Not the Electrodes, Dominates Charge Transport in Metal-Monolayer//Ga2O3/Gallium–Indium Eutectic Junctions

Published:2012-05-23 Issue:6 Volume:6 Page:4806-4822
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Reus William F.¹,Thuo Martin M.¹,Shapiro Nathan D.¹,Nijhuis Christian A.¹²³,Whitesides George M.¹⁴

Affiliation:

1. Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, United States

2. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543

3. Graphene Research Centre, Faculty of Science, National University of Singapore, 6 Science drive 2, Singapore 117546

4. Kavli Institute for Bionano Science & Technology, Harvard University, School of Engineering and Applied Sciences, Pierce Hall, 29 Oxford Street, Cambridge, Massachusetts 02138, United States

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn205089u

Reference54 articles.

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2. Molecular Rectification in a Metal−Insulator−Metal Junction Based on Self-Assembled Monolayers

3. Current Rectification in a Langmuir−Schaefer Monolayer of Fullerene-bis-[4-diphenylamino-4‘ ‘-(N-ethyl-N-2‘ ‘‘-ethyl)amino-1,4-diphenyl-1,3-butadiene] Malonate between Au Electrodes

4. Tuning current rectification across molecular junctions

5. Electron Transport through Rectifying Self-Assembled Monolayer Diodes on Silicon: Fermi-Level Pinning at the Molecule−Metal Interface

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