Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices-Reference-Cited by-同舟云学术

Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices

Published:2010-02-08 Issue:3 Volume:10 Page:992-995
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Aristov Victor Yu.¹²,Urbanik Grzegorz¹,Kummer Kurt³,Vyalikh Denis V.³,Molodtsova Olga V.¹,Preobrajenski Alexei B.⁴,Zakharov Alexei A.⁴,Hess Christian¹,Hänke Torben¹,Büchner Bernd¹,Vobornik Ivana⁵,Fujii Jun⁵,Panaccione Giancarlo⁵,Ossipyan Yuri A.²,Knupfer Martin¹

Affiliation:

1. Leibniz Institute for Solid State and Materials Research, D-01069 Dresden, Germany

2. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow District, 142432, Russia

3. Institute of Solid State Physics, Dresden University of Technology, D-01062 Dresden, Germany

4. MAX-lab, Lund University, Box 118, 22100 Lund, Sweden

5. TASC National Laboratory, INFM-CNR, SS 14, km 163.5, I-34012 Trieste, Italy

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl904115h

Reference33 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Bipolar supercurrent in graphene

4. Landau-Level Splitting in Graphene in High Magnetic Fields

5. Experimental observation of the quantum Hall effect and Berry's phase in graphene

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