Large-Scale Mixed-Dimensional Photodiodes Based on 2D p-MoTe2 and 3D n-Si Vertical Heterojunctions-Reference-Cited by-同舟云学术

Large-Scale Mixed-Dimensional Photodiodes Based on 2D p-MoTe₂ and 3D n-Si Vertical Heterojunctions

Published:2024-04-29 Issue:5 Volume:2 Page:871-876
ISSN:2771-9855
Container-title:ACS Applied Optical Materials
language:en
Short-container-title:ACS Appl. Opt. Mater.

Author:

Wang Qi¹²,Huang Xinyue¹²,Liu Ziqi¹,Song Yiwen¹²,Ran Yuqia¹,Li Yanping¹,Pan Yu¹,Ye Yu¹³⁴^ORCID

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China

2. Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China

3. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

4. Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, Jiangsu 226010, China

Funder

National Key Research and Development Program of China

China Postdoctoral Science Foundation

Beijing Municipal Natural Science Foundation

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaom.4c00121

Reference34 articles.

1. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

2. Ultrasensitive Near-Infrared Photodetectors Based on a Graphene–MoTe2–Graphene Vertical van der Waals Heterostructure

3. Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems

4. Infrared Photodetectors Based on 2D Materials and Nanophotonics

5. High‐performance optical noncontact controlling system based on broadband PtTe x /Si heterojunction photodetectors for human–machine interaction

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