Boron Incorporation at a Diamond Surface: A QM/MM Study of Insertion and Migration Pathways during Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Boron Incorporation at a Diamond Surface: A QM/MM Study of Insertion and Migration Pathways during Chemical Vapor Deposition

Published:2012-08-17 Issue:34 Volume:116 Page:18300-18307
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Richley James C.¹,Harvey Jeremy N.¹,Ashfold Michael N. R.¹

Affiliation:

1. School of Chemistry, University of Bristol, Bristol, BS8 1TS, United Kingdom

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp305773d

Reference41 articles.

1. Goodwin, D. G.; Butler, J. E.InHandbook of Industrial Diamonds and Diamond Films;Prelas, M. A., Popovici, G., Bigelow, L. K., Eds.Marcel Dekker:New York, 1998; pp527–581.

2. Properties of Boron-Doped Epitaxial Diamond Films

3. Hydrogen-boron interactions inp-type diamond

4. Characterisation and lattice location of nitrogen and boron in homoepitaxial CVD diamond

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