Repeated Growth–Etching–Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Repeated Growth–Etching–Regrowth for Large-Area Defect-Free Single-Crystal Graphene by Chemical Vapor Deposition

Published:2014-12-01 Issue:12 Volume:8 Page:12806-12813
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ma Teng¹,Ren Wencai¹,Liu Zhibo¹,Huang Le²,Ma Lai-Peng¹,Ma Xiuliang¹,Zhang Zhiyong²,Peng Lian-Mao²,Cheng Hui-Ming¹

Affiliation:

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People’s Republic of China

2. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People’s Republic of China

Funder

Chinese Academy of Sciences

Ministry of Science and Technology of China

National Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn506041t

Reference54 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene: Status and Prospects

3. The rise of graphene

4. Controllable Synthesis of Graphene and Its Applications

5. Grains and grain boundaries in single-layer graphene atomic patchwork quilts

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