Improved Pattern Transfer in Nanoimprint Lithography at 30 nm Half-Pitch by Substrate−Surface Functionalization-Reference-Cited by-同舟云学术

Improved Pattern Transfer in Nanoimprint Lithography at 30 nm Half-Pitch by Substrate−Surface Functionalization

Published:2005-05-28 Issue:14 Volume:21 Page:6127-6130
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Jung Gun-Young¹,Li Zhiyong¹,Wu Wei¹,Ganapathiappan S.¹,Li Xuema¹,Olynick Deirdre L.¹,Wang S. Y.¹,Tong William M.¹,Williams R. Stanley¹

Affiliation:

1. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 02-400, Berkeley, California 94720, and Technology Development Operations, Inkjet Technology Platform, Hewlett-Packard Company, 1000 Circle Boulevard, Corvallis, Oregon 97330

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la050021c

Reference19 articles.

1. Room-temperature Si single-electron memory fabricated by nanoimprint lithography

2. Fabrication of Size-Controllable Nanofluidic Channels by Nanoimprinting and Its Application for DNA Stretching

3. Fabrication of a new broadband waveguide polarizer with a double-layer 190 nm period metal-gratings using nanoimprint lithography

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