Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups-Reference-Cited by-同舟云学术

Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups

Published:2013-05-28 Issue:11 Volume:5 Page:4865-4871
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yu Hojeong¹,Cho Han-Hee²,Cho Chul-Hee²,Kim Ki-Hyun²,Kim Dong Yeong¹,Kim Bumjoon J.²,Oh Joon Hak¹

Affiliation:

1. School of Nano-Bioscience & Chemical Engineering, KIER-UNIST Advanced Center for Energy, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea

2. Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am400618r

Reference57 articles.

1. Rylene and Related Diimides for Organic Electronics

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5. A high-mobility electron-transporting polymer for printed transistors

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