Photoresist Trimming in Oxygen-Based High-Density Plasmas: Effect of HBr and Cl2 Addition to CF4/O2 Mixtures-Reference-Cited by-同舟云学术

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Photoresist Trimming in Oxygen-Based High-Density Plasmas: Effect of HBr and Cl2 Addition to CF4/O2 Mixtures

Published:2003-10-23 Issue:24 Volume:42 Page:6080-6087
ISSN:0888-5885
Container-title:Industrial & Engineering Chemistry Research
language:en
Short-container-title:Ind. Eng. Chem. Res.

Author:

Sin Chian-Yuh¹,Chen Bing-Hung¹,Loh W. L.¹,Yu J.¹,Yelehanka P.¹,See A.¹,Chan L.¹

Affiliation:

1. Department of Chemical and Environmental Engineering, The National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Chartered Semiconductor Manufacturing, Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406, and Department of Chemical Engineering, National Cheng Kung University, 1 University Road, Tainan 70148, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/ie030059p

Reference30 articles.

1. Lithography at a wavelength of 193 nm

2. Patterning sub-30-nm MOSFET gate with i-line lithography

3. Deep-submicrometer MOS device fabrication using a photoresist-ashing technique

4. Realization of deep-submicron MOSFETS by lateral etching

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photo-resist trimming for sub 0.1 μm generation integrated circuit devices by Cl2/O2 transform coupled plasma;Microelectronic Engineering;2004-08

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