Control of Convective Processes in a Melt for Growth of Doped Semiconductor Crystals with High Homogeneity of Properties-Reference-Cited by-同舟云学术

Control of Convective Processes in a Melt for Growth of Doped Semiconductor Crystals with High Homogeneity of Properties

Published:2010-11-30 Issue:1 Volume:11 Page:69-74
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Strelov Vladimir I.¹,Korobeynikova Elena N.¹,Folomeev Vladimir I.²

Affiliation:

1. Space Materials Science Research Center, Division of Institute of Crystallography, Russian Academy of Sciences, 8 Akademicheskaya Strasse, Kaluga 248640, Russia

2. The State Scientific Center of Russian Federation Institute for Physics and Power Engineering, named after acad. A.I.Leipunsky, Obninsk 249033, Russia

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg100597m

Reference18 articles.

1. Müller, G.Convection and inhomogeneities in crystal growth from the melt;Berlin:Springer, 1988; p143.

2. Magnetic field elimination of convective interference with segregation during vertical-Bridgman growth of doped semiconductors

3. Quantitative analysis of the effects of vertical magnetic fields on microsegregation in Te-doped LEC GaAs

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