Stable Highly Doped C60-mSim Heterofullerenes: A First Principles Study of C40Si20, C36Si24, and C30Si30
Author:
Affiliation:
1. Institut de Physique et Chimie des Matériaux de Strasbourg, 23 rue du Loess, BP 43 F-67034 Strasbourg Cedex 2, France
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/jp058094s
Reference24 articles.
1. Production and characterization of boron- and silicon-doped carbon clusters
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3. Synthesis and Structure of Silicon-doped Heterofullerenes
4. Photolysis experiments on SiC mixed clusters: From silicon carbide clusters to silicon-doped fullerenes
5. Production and stability of silicon-doped heterofullerenes
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