Breakdown Enhancement in Silicon Nanowire p-n Junctions-Reference-Cited by-同舟云学术

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Breakdown Enhancement in Silicon Nanowire p-n Junctions

Published:2007-03-10 Issue:4 Volume:7 Page:896-899
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Agarwal P.¹,Vijayaraghavan M. N.¹,Neuilly F.¹,Hijzen E.¹,Hurkx G. A. M.¹

Affiliation:

1. NXP Semiconductors, Research, Kapeldreef 75, 3001 Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl062681n

Reference12 articles.

1. Silicon Vertically Integrated Nanowire Field Effect Transistors

2. Nanoscale avalanche photodiodes for highly sensitive and spatially resolved photon detection

3. Stable Ordering in Langmuir-Blodgett Films

4. Detection, Stimulation, and Inhibition of Neuronal Signals with High-Density Nanowire Transistor Arrays

5. Realization of a Linear Germanium Nanowire p−n Junction

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