Studying Transient Carrier Behaviors in Pentacene Field Effect Transistors Using Visualized Electric Field Migration-Reference-Cited by-同舟云学术

Studying Transient Carrier Behaviors in Pentacene Field Effect Transistors Using Visualized Electric Field Migration

Published:2009-05-18 Issue:23 Volume:113 Page:10279-10284
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Manaka Takaaki¹,Liu Fei¹,Weis Martin¹,Iwamoto Mitsumasa¹

Affiliation:

1. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan, and Center for Advanced Study, Tsinghua University, Beijing 100084, China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp900779d

Reference24 articles.

1. Ambipolar pentacene field-effect transistors with calcium source-drain electrodes

2. General observation of n-type field-effect behaviour in organic semiconductors

3. Spatial control of the recombination zone in an ambipolar light-emitting organic transistor

4. Morphology and electronic transport of polycrystalline pentacene thin-film transistors

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