Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors-Reference-Cited by-同舟云学术

Electrical Spin Injection and Detection in Mn5Ge3/Ge/Mn5Ge3 Nanowire Transistors

Published:2013-08-16 Issue:9 Volume:13 Page:4036-4043
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Tang Jianshi¹,Wang Chiu-Yen¹²,Chang Li-Te¹,Fan Yabin¹,Nie Tianxiao¹,Chan Michael¹,Jiang Wanjun¹,Chen Yu-Ting,Yang Hong-Jie,Tuan Hsing-Yu,Chen Lih-Juann,Wang Kang L.¹

Affiliation:

1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California, 90095, United States

2. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, 10607, Republic of China

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl401238p

Reference52 articles.

1. International Technology Roadmap of Semiconductors, 2012, ed.http://www.itrs.net; accessed Jan 21, 2013.

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. Spintronics: Fundamentals and applications

4. Electronic analog of the electro‐optic modulator

5. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

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