E1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering-Reference-Cited by-同舟云学术

E1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering

Published:2013-06-06 Issue:7 Volume:13 Page:3011-3016
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Zardo Ilaria¹²,Yazji Sara¹,Hörmann Nicolas¹,Hertenberger Simon¹,Funk Stefan¹²,Mangialardo Sara³,Morkötter Stefanie¹,Koblmüller Gregor¹,Postorino Paolo³,Abstreiter Gerhard¹²

Affiliation:

1. Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany

2. Institute for Advanced Study, Technische Universität München, Lichtenbergstrasse 2a, D-85748 Garching, Germany

3. Dipartimento di Fisica, Università di Roma Sapienza, P.le Aldo Moro 5, I-00185 Roma, Italy

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl304528j

Reference32 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. Nanowire photonics

3. Resonant Raman Scattering in Semiconductors

4. Resonant Raman scattering in GaAs

5. Resonant Raman scattering in germanium

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