Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene-Reference-Cited by-同舟云学术

Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene

Published:2009-06-15 Issue:7 Volume:9 Page:2600-2604
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Campos Leonardo C.¹,Manfrinato Vitor R.¹,Sanchez-Yamagishi Javier D.¹,Kong Jing¹,Jarillo-Herrero Pablo¹

Affiliation:

1. Department of Physics and Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG CEP: 31270-901, Brazil, and Departamento de Engenharia de Sistemas Eletrônicos, Escola Politécnica, Universidade de São Paulo, São Paulo, SP CEP: 05508-970, Brazil

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl900811r

Reference44 articles.

1. The rise of graphene

2. Moving towards a graphene world

3. Analysis of graphene nanoribbons as a channel material for field-effect transistors

4. Ballistic Transport in Graphene Nanostrips in the Presence of Disorder: Importance of Edge Effects

5. Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors

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