Transient Mobility Mechanisms of Deposited Metal Atoms on Insulating Surfaces: Pd on MgO (100)-Reference-Cited by-同舟云学术

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Transient Mobility Mechanisms of Deposited Metal Atoms on Insulating Surfaces: Pd on MgO (100)

Published:2012-07-02 Issue:27 Volume:116 Page:14471-14479
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Gao David Z.¹,Watkins Matthew B.²,Shluger Alexander L.¹²³

Affiliation:

1. Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT, United Kingdom

2. London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1, United Kingdom

3. WPI-AIMR, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp303951y

Reference108 articles.

1. Hitting the Surface--Softly

2. Introduction to Surface and Thin Film Processes

3. Epitaxial growth of Al on Si(111) and Si(100) by ionized‐cluster beam

4. X-ray characteristics of atomically flat gold films deposited by ICB

5. Intermixing and three-dimensional islands in the epitaxial growth of Au on Ag(110)

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