Aqueous Solutions for Low-Temperature Photoannealing of Functional Oxide Films: Reaching the 400 °C Si-Technology Integration Barrier-Reference-Cited by-同舟云学术

Aqueous Solutions for Low-Temperature Photoannealing of Functional Oxide Films: Reaching the 400 °C Si-Technology Integration Barrier

Published:2011-08-01 Issue:33 Volume:133 Page:12922-12925
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

De Dobbelaere Christopher¹,Calzada Maria Lourdes²,Jiménez Ricardo²,Ricote Jesús²,Bretos Iñigo²,Mullens Jules¹,Hardy An¹,Van Bael Marlies K.¹

Affiliation:

1. Inorganic and Physical Chemistry Group, Institute for Materials Research, Universiteit Hasselt, IMEC vzw, Division IMOMEC, B-3590 Diepenbeek, Belgium

2. Instituto de Ciencia de Materiales de Madrid, C.S.I.C., Cantoblanco, E-28049 Madrid, Spain

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja203553n

Reference31 articles.

1. Chemical solution deposition of electronic oxide films

2. Sonochemical Preparation of PbTiO3 Fine Powders

3. Sol-gel-derived lead titanate films

4. Preparation of Inorganic Materials Using Ionic Liquids

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