Silicon Surface Passivation by Organic Monolayers:  Minority Charge Carrier Lifetime Measurements and Kelvin Probe Investigations

Author:

Sieval Alexander B.1,Huisman Carolien L.1,Schönecker Axel1,Schuurmans Frank M.1,van der Heide Arvid S. H.1,Goossens Albert1,Sinke Wim C.1,Zuilhof Han1,Sudhölter Ernst J. R.1

Affiliation:

1. Laboratory of Organic Chemistry, Wageningen University, Dreijenplein 8, 6703 HB Wageningen, Laboratory of Inorganic Chemistry, Department of Chemical Technology, Delft University of Technology, Julianalaan 136, 2628 BL Delft, and Energy Research Center of the Netherlands, P.O. Box 1, 1755ZG Petten, The Netherlands

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Reference47 articles.

1. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces

2. Auger recombination in silicon atlowcarrier densities

3. Poortmans, J.; Vermeulen, T.; Nijs, J.; Mertens, R.Proceedings of the 25thIEEE Photovoltaic Specialists Conference, Washington, DC, 1996; IEEE:  Piscataway, NJ, 1996; pp 721−724.

4. Novel method for minority‐carrier mobility measurement using photoconductance decay with chemically passivated and plasma damaged surfaces

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