Bias-Enhanced Nucleation and Growth Processes for Ultrananocrystalline Diamond Films in Ar/CH4 Plasma and Their Enhanced Plasma Illumination Properties-Reference-Cited by-同舟云学术

Bias-Enhanced Nucleation and Growth Processes for Ultrananocrystalline Diamond Films in Ar/CH4 Plasma and Their Enhanced Plasma Illumination Properties

Published:2014-06-27 Issue:13 Volume:6 Page:10566-10575
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Saravanan Adhimoorthy¹,Huang Bohr-Ran¹,Sankaran Kamatchi Jothiramalingam,Kunuku Srinivasu,Dong Chung-Li²,Leou Keh-Chyang,Tai Nyan-Hwa,Lin I-Nan³

Affiliation:

1. Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan R.O.C.

2. Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan R. O. C.

3. Department of Physics, Tamkang University, Tamsui 251, Taiwan R.O.C.

Funder

National Science Council, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am502231d

Reference45 articles.

1. Grain-Size-Dependent Diamond−Nondiamond Composite Films: Characterization and Field-Emission Properties