Tuning the Interfacial Electronic Structure of MoS<sub>2</sub> by Adsorption of Cobalt Phthalocyanine Derivatives-Reference-Cited by-同舟云学术

Tuning the Interfacial Electronic Structure of MoS₂ by Adsorption of Cobalt Phthalocyanine Derivatives

Published:2024-03-30 Issue:4 Volume:6 Page:2467-2477
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Haizmann Philipp¹,Juriatti Eric¹,Klein Maren¹,Greulich Katharina¹,Ovsyannikov Ruslan²,Giangrisostomi Erika²,Chassé Thomas¹^ORCID,Peisert Heiko¹^ORCID,Scheele Marcus¹³^ORCID

Affiliation:

1. Institut für Theoretische und Physikalische Chemie, Universität Tübingen, 72076 Tübingen, Germany

2. Institute Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany

3. Center for Light-Matter Interaction, Sensors & Analytics LISA+, Universität Tübingen, 72076 Tübingen, Germany

Funder

Deutsche Forschungsgemeinschaft

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00094

Reference70 articles.

1. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

4. Single-layer MoS2 transistors

5. The organic–2D transition metal dichalcogenide heterointerface

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