Adjusting Photoresist Curing Temperature to Eliminate Electrostatic Breakdown from Etching Residues-Reference-Cited by-同舟云学术

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Adjusting Photoresist Curing Temperature to Eliminate Electrostatic Breakdown from Etching Residues

Published:2023-04-20 Issue:5 Volume:5 Page:2518-2527
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yu Xiang¹^ORCID,Song Ruochen¹,Zhang Zhiqiang¹²^ORCID,Yang Lei¹,Zhang Pingping¹

Affiliation:

1. Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences (Beijing), Beijing 100083, PR China

2. Product Development Center, Beijing BOE Optoelectronics Technology Company, Ltd., Beijing 100176, PR China

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01771

Reference52 articles.

1. Visualizing Large, Heterogeneous Data in Hybrid-Reality Environments

2. Case study

3. Disaster state information management gis system based on tiled diplay environment

4. Adjusting indium-tin-oxide film thickness to improve electrochemical corrosion resistance of gate driver on array

5. The Design and Application of Intelligent Buoys in Polar Water

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