Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films-Reference-Cited by-同舟云学术

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Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Published:2020-12-04 Issue:12 Volume:2 Page:3880-3888
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hui Jian¹²,Hu Qingyun¹²,Luo Yuxi¹³,Lai Tianxing¹²,Zhang Zhan⁴,Ren Yang⁴,Zhang Lanting¹²^ORCID,Wang Hong¹²³^ORCID

Affiliation:

1. Materials Genome Initiative Center, Shanghai Jiao Tong University, Shanghai 200240, China

2. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China

3. Zhiyuan College, Shanghai Jiao Tong University, Shanghai 200240, China

4. X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States

Funder

Ministry of Science and Technology of the People's Republic of China

Yunnan Province

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00717

Reference32 articles.

1. Phase change thin films for non-volatile memory applications

2. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

3. Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices

4. EFFECTS OF BARRIER LAYERS ON THE ELECTRICAL BEHAVIORS OF PHASE-CHANGE MEMORY DEVICES USING Sb-RICH Ge-Sb-Te FILMS

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High‐Throughput Study of Amorphous Stability and Optical Properties of Superlattice‐Like Ge–Sb–Te Thin Films;Small;2023-11-30

2. High-throughput investigation of structural evolution upon solid-state in Cu–Cr–Co combinatorial multilayer thin-film;Materials & Design;2022-03

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