Ga<sup>+</sup> Ion Irradiation-Induced Tuning of Artificial Pinning Sites to Control Domain Wall Motion-Reference-Cited by-同舟云学术

Ga⁺ Ion Irradiation-Induced Tuning of Artificial Pinning Sites to Control Domain Wall Motion

Published:2023-01-26 Issue:2 Volume:5 Page:985-993
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Giuliano Domenico¹,Gnoli Luca¹,Ahrens Valentin²,Roch Massimo Ruo¹,Becherer Markus²,Turvani Giovanna¹,Vacca Marco¹,Riente Fabrizio¹^ORCID

Affiliation:

1. Department of Electronics and Telecommunications, Politecnico di Torino, 10129Torino, Italy

2. Nanomagnetic Devices Group, Chair of Nano and Quantum Sensors, Department of Electrical and Computer Engineering, Technical University of Munich, Munich80333, Germany

Funder

Compagnia di San Paolo

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01510

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3. Nanoscale domain wall devices with magnetic tunnel junction read and write

4. Domain wall memory: Physics, materials, and devices

5. Current-driven magnetic domain-wall logic

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