Composition-Dependent Properties of Wurtzite-Type Mg1+xSn1–xN2 Epitaxially Grown on GaN(001) Templates-Reference-Cited by-同舟云学术

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Composition-Dependent Properties of Wurtzite-Type Mg1+xSn1–xN2 Epitaxially Grown on GaN(001) Templates

Published:2021-03-03 Issue:3 Volume:3 Page:1341-1349
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yamada Naoomi¹^ORCID,Matsuura Kenta¹,Imura Masataka²,Murata Hidenobu³,Kawamura Fumio⁴^ORCID

Affiliation:

1. Department of Applied Chemistry, Chubu University, 1200 Matsumoto, Kasugai, Aichi 487-8501, Japan

2. Next-Generation Semiconductor Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Department of Materials Science, Osaka Prefecture University, 1-1 Gakuencho, Naka-ku, Sakai, Osaka 599-8531, Japan

4. High Pressure Group, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Naito Science and Engineering Foundation

Chubu University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01115

Reference58 articles.

1. III-Nitride Semiconductors and their Modern Devices

2. Handbook of Ceramic Hard Materials

3. Structural families in nitride chemistry

4. A map of the inorganic ternary metal nitrides

5. Heterovalent ternary II-IV-N2 compounds: perspectives for a new class of wide-band-gap nitrides

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3. Thin-film synthesis of metastable rocksalt MgSnN2 without epitaxial stabilization;Materials Letters;2024-03

4. A first-principles study of MgSnN₂ films using a DFT-1/2 approach;Physica Scripta;2023-08-09

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