Lateral BN-BCN Heterostructure Tunneling Transistor with Large Current Modulation
Author:
Affiliation:
1. Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak 3836119131, Iran
2. Department of Electrical Engineering, Sharif University of Technology, Tehran 1458889694, Iran
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00492
Reference22 articles.
1. Atomic layers of hybridized boron nitride and graphene domains
2. A review of boron carbon nitride thin films and progress in nanomaterials
3. Dominant formation of h-BC2N in h-BxCyNz films: CVD synthesis and characterization
4. Electronic Structures of BC2N Nanoribbons
5. Magnetism in armchair BC2N nanoribbons
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical Study of a Vertical Tunneling Transistor Based on Gr/BC2N/BC6N and BC2N′/hBN/BC2N′ Heterostructures;ACS Applied Electronic Materials;2023-07-13
2. Recent insights into BCN nanomaterials – synthesis, properties and applications;New Journal of Chemistry;2023
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