Fermi Level Pinning Induced by Doping in Air Stable n-Type Organic Semiconductor
Author:
Affiliation:
1. Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
2. Department of Chemistry, Bilkent University, 06800 Bilkent, Ankara, Turkey
Funder
UK Research and Innovation
Indian Institute of Science
Department of Science and Technology, Ministry of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00742
Reference44 articles.
1. Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors
2. Highly Efficient Organic Devices Based on Electrically Doped Transport Layers
3. Controlled p-doping of pigment layers by cosublimation: Basic mechanisms and implications for their use in organic photovoltaic cells
4. Bulk-heterojunction photovoltaic devices based on donor–acceptor organic small molecule blends
5. Efficient organic solar cells based on a double p-i-n architecture using doped wide-gap transport layers
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