Printed High-k Dielectric for Flexible Low-Power Extended Gate Field-Effect Transistor in Sensing Pressure-Reference-Cited by-同舟云学术

Printed High-k Dielectric for Flexible Low-Power Extended Gate Field-Effect Transistor in Sensing Pressure

Published:2019-04-24 Issue:5 Volume:1 Page:711-717
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Sun Qi-Jun¹,Li Tan¹,Wu Wei¹,Venkatesh Shishir¹,Zhao Xin-Hua²,Xu Zong-Xiang²,Roy Vellaisamy A. L.¹^ORCID

Affiliation:

1. State Key Laboratory of Terahertz and Millimeter Waves and Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong SAR, P. R. China

2. Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, P. R. China

Funder

City University of Hong Kong

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00081

Reference49 articles.

1. Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

2. Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes

3. Thermally Stable, Biocompatible, and Flexible Organic Field-Effect Transistors and Their Application in Temperature Sensing Arrays for Artificial Skin

4. Stretchable temperature-sensing circuits with strain suppression based on carbon nanotube transistors

5. Organic Field-Effect Transistors with Macroporous Semiconductor Films as High-Performance Humidity Sensors

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