Achieving Adsorbate-Free Monolayered MoS<sub>2</sub> Field Effect Transistors by Controlled Surface Gas Treatment-Reference-Cited by-同舟云学术

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Achieving Adsorbate-Free Monolayered MoS₂ Field Effect Transistors by Controlled Surface Gas Treatment

Published:2024-02-26 Issue:3 Volume:6 Page:1763-1769
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Byeon Junsung¹,Eom Jaesik¹,Kim Taehun¹,Lim Jungmoon¹,Jung Min¹,Lim Younghoon¹,Park Hongju¹,Hong John²,Pak Sangyeon³^ORCID,Cha SeungNam¹^ORCID

Affiliation:

1. Department of Physics, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea

2. School of Materials Science and Engineering, Kookmin University, Seoul 02707, Republic of Korea

3. School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01665

Reference41 articles.

1. Single-layer MoS2 transistors

2. Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors

3. Adsorption of H2, O2, H2O, OH and H on monolayer MoS2

4. Hysteresis in Single-Layer MoS2 Field Effect Transistors

5. Scaling behavior of hysteresis in multilayer MoS2 field effect transistors

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