Growth of Low-defect Si-Doped Ga2O3 Film on Fluorine-doped Tin Oxide Substrate for Self-powered and High-performance Ultraviolet Photodetector
Author:
Affiliation:
1. Department of Electrical Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, South Korea
Funder
National Research Foundation of Korea
Korea Basic Science Institute
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01332
Reference51 articles.
1. Review of Ga2O3-based optoelectronic devices
2. Progress in state-of-the-art technologies of Ga2O3 devices
3. A High-Performance ε-Ga2O3-Based Deep-Ultraviolet Photodetector Array for Solar-Blind Imaging
4. Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
5. High-Performance Solar Blind Ultraviolet Photodetector Based on Single Crystal Orientation Mg-Alloyed Ga2O3 Film Grown by a Nonequilibrium MOCVD Scheme
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