Tunable n-Type Conductivity and Transport Properties of Cubic Boron Nitride via Carbon Doping
Author:
Affiliation:
1. Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695.7916, United States
2. Logic Technology Development Division, Intel Corporation, Hillsboro, Oregon 97124, United States
Funder
Army Research Office
Fan Family Foundation
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c01130
Reference46 articles.
1. Preparation of Semiconducting Cubic Boron Nitride
2. Ultraviolet light‐emitting diode of a cubic boron nitridepnjunction made at high pressure
3. Growth of cubic boron nitride on Si(100) by neutralized nitrogen ion bombardment
4. An Overview on the Formation and Processing of Nitrogen-Vacancy Photonic Centers in Diamond by Ion Implantation
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