Ultralow Dark Current and High On/Off Ratio Photodetector Based on a Two-Dimensional GeSe/VP Heterostructure-Reference-Cited by-同舟云学术

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Ultralow Dark Current and High On/Off Ratio Photodetector Based on a Two-Dimensional GeSe/VP Heterostructure

Published:2024-07-20 Issue: Volume: Page:
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lv Siqi¹,Feng Chao¹^ORCID,Fu Guangyang¹,Zhuang Xuye¹

Affiliation:

1. Department of Industrial Engineering, Shandong University of Technology, Zibo, Shandong 255000, China

Funder

Taishan Scholar Project of Shandong Province

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Shandong Provincial Key Laboratory of Precision Manufacturing and Non-traditional Machining

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00771

Reference42 articles.

1. Ultrahigh-photoresponsive UV photodetector based on a BP/ReS2 heterostructure p–n diode

2. Exploring the structural and electronic properties of GeC/BP van der Waals heterostructures

3. Two-Dimensional Crystals: Graphene, Silicene, Germanene, and Stanene

4. Fabrication of two-dimensional biotite nanosheets from natural biotite clay as a potent antibacterial agent

5. High‐throughput computational screening of layered and two‐dimensional materials

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