Graphene Nanoribbon Field-Effect Transistors with Top-Gate Polymer Dielectrics-Reference-Cited by-同舟云学术

Graphene Nanoribbon Field-Effect Transistors with Top-Gate Polymer Dielectrics

Published:2022-05-26 Issue:6 Volume:4 Page:2667-2671
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Jeong Beomjin¹²^ORCID,Wuttke Michael¹,Zhou Yazhou¹^ORCID,Müllen Klaus¹³^ORCID,Narita Akimitsu¹^ORCID,Asadi Kamal¹⁴⁵^ORCID

Affiliation:

1. Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany

2. Department of Organic Material Science and Engineering, Pusan National University, Busandaehak-ro 63 beongil 2, Geumjeong-gu, Busan 46241, Republic of Korea

3. Department of Chemistry, Johannes Gutenberg University Mainz, Duesbergweg 10-14, 55128 Mainz, Germany

4. Department of Physics, University of Bath, Claverton Down, Bath BA2 7AY, United Kingdom

5. Centre for Therapeutic Innovations, University of Bath, Bath BA2 7AY, United Kingdom

Funder

Gutenberg Forschungskolleg

Johannes Gutenberg-Universit?t Mainz

Max-Planck-Gesellschaft

Alexander von Humboldt-Stiftung

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00194

Reference22 articles.

1. Organic field-effect transistor sensors: a tutorial review

2. Graphene-Based Flexible and Stretchable Electronics

3. Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator

4. Interfacial engineering in graphene bandgap

5. Integrated circuits based on conjugated polymer monolayer

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